http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST3215B 2.2a, 150v, r ds(o!) 320m ? !-ch enhancement mode power mosfet 15-jul-2016 rev. a page 1 of 5 b l f h c j d g k a e 3215b = date code rohs compliant product a suffix of -c specifies halogen and lead-free description SST3215B provides designers with the best combinat ion of fast switching, low on-resistance and cost-e ffectiveness. sot-26 package is universally used for all c ommercial- industrial surface mount applications. features 150v/2.2a r ds(on) Q 320m5@ v gs =10v r ds(on) Q 380m5@ v gs =4.5v reliable and rugged green device available marking package information package mpq leader size sot-26 3k 7 inch absolute maximum ratings parameter symbol rating unit drain-source voltage v ds 150 v gate-source voltage v gs 20 v t c =25c 2.2 t c =75c 1.8 t a =25c 1.7 continuous drain current, v gs =10v 1 t a =75c i d 1.4 a pulsed drain current 2 i dm 8 a t c =25c 3.2 power dissipation t a =25c p d 2 w operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating t Q 5sec 62.5 thermal resistance junction to ambient 1 steady state 125 thermal resistance junction to ambient r ja 156 thermal resistance junction to case 1 r jc 39 c / w sot-26 d g d d d s mi llimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.30 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST3215B 2.2a, 150v, r ds(o!) 320m ? !-ch enhancement mode power mosfet 15-jul-2016 rev. a page 2 of 5 electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition drain-source breakdown voltage bv dss 150 - - v v gs =0, i d =250a gate-threshold voltage v gs(th) 1 - 2.5 v v ds =v gs , i d =250a gate-body leakage current i gss - - 100 na v gs =20v - - 1 v ds =120v, v gs =0, t j =25 c drain-source leakage current i dss - - 10 a v ds =120v, v gs =0, t j =55 c 260 320 v gs =10v, i d =1.5a drain-source on-resistance 3 r ds(on) - 290 380 m5 v gs =4.5v, i d =1.5a forward transfer conductance g fs - 3.3 - s v ds =15v, i d =1a total gate charge q g - 8.1 - gate-source charge q gs - 1 - gate-drain (miller)charge q gd - 1.9 - nc v ds =75v v gs =10v i d =1.7a turn-on delay time t d(on) - 5.2 - rise time t r - 16.2 - turn-off delay time t d(off) - 20.8 - fall time t f - 15.6 - ns v ds =75v v gs =10v r g =65 i d =1a input capacitance c iss - 298 - output capacitance c oss - 32 - reverse transfer capacitance c rss - 19 - pf v gs =0v v ds =30v f=1mhz source-drain diode characteristic diode forward voltage 3 v sd - - 1.2 v i s =1.7a, v gs =0 continuous source current 1 i s - - 1.7 pulsed source current 2 i sm - - 5 a reverse recovery time t rr - 45 - ns reverse recovery charge q rr - 16 - nc i f =1.7a, dl/dt=100a/s, t j =25c notes: 1. surface mounted on 1 inch 2 fr4 board with 2 oz copper. 2. the power dissipation is limited by 150c junct ion temperature. 3. the data is tested by pulse: pulse width 300 Q s, duty cycle 2% Q .
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST3215B 2.2a, 150v, r ds(o!) 320m ? !-ch enhancement mode power mosfet 15-jul-2016 rev. a page 3 of 5 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST3215B 2.2a, 150v, r ds(o!) 320m ? !-ch enhancement mode power mosfet 15-jul-2016 rev. a page 4 of 5 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST3215B 2.2a, 150v, r ds(o!) 320m ? !-ch enhancement mode power mosfet 15-jul-2016 rev. a page 5 of 5 characteristic curves
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